| PART |
Description |
Maker |
| KSC5802ASDTBTU |
10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SC5353-T60-K 2SC5353-T6C-K 2SC5353-TA3-T 2SC5353- |
HIGH VOLTAGE NPN TRANSISTOR 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Unisonic Technologies Co., Ltd.
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| BU2530AW |
Silicon Diffused Power Transistor(硅扩散功率型晶体 16 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU2520DF |
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU4525DF |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BU4508AX |
Silicon Diffused Power Transistor 8 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KSC5027 C5027 KSC5027N KSC5027O KSC5027R |
High Voltage and High Reliability 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STB18NM80 STF18NM80 STP18NM80 STW18NM80 |
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| KSC5030F05 KSC5030FRTU KSC5030F KSC5030FOTU |
6 A, 800 V, NPN, Si, POWER TRANSISTOR TO-3PF, 3 PIN
High Voltage Fast Switching Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
